KSE44H11TU
TRANS NPN 80V 10A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSE44H11TU is an NPN Bipolar Junction Transistor (BJT) designed for demanding applications. This through-hole component features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 10A. With a power dissipation of 1.67W and a transition frequency of 50MHz, it is suitable for various power switching and amplification tasks in industrial and consumer electronics. The device exhibits a minimum DC current gain (hFE) of 60 at 2A and 1V, with a Vce saturation of 1V at 400mA and 8A. The KSE44H11TU is supplied in a TO-220-3 package and operates at a maximum junction temperature of 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.67 W |
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