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KSE44H11

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KSE44H11

TRANS NPN 80V 10A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSE44H11 is an NPN bipolar junction transistor designed for robust performance in demanding applications. Featuring a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 10A, this device excels in power switching and amplification circuits. Its DC current gain (hFE) is a minimum of 60 at 2A and 1V, ensuring efficient operation. The transition frequency is rated at 50MHz, suitable for moderate frequency signal processing. With a maximum power dissipation of 1.67W and an operating junction temperature of 150°C, the KSE44H11 is engineered for reliability in industrial and consumer electronics sectors. The TO-220-3 through-hole package facilitates ease of assembly in high-volume manufacturing. Vce saturation is specified at a maximum of 1V at 400mA base current and 8A collector current.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 2A, 1V
Frequency - Transition50MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max1.67 W

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