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KSE350STU

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KSE350STU

TRANS PNP 300V 0.5A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSE350STU is a PNP bipolar junction transistor (BJT) designed for applications requiring high voltage and moderate current handling. This device features a maximum collector emitter breakdown voltage (Vce) of 300 V and a continuous collector current (Ic) capability of 500 mA. With a maximum power dissipation of 20 W, it is suitable for power switching and amplification circuits. The minimum DC current gain (hFE) is 30 at 50 mA and 10 V. The transistor is housed in a TO-126-3 (TO-225AA) through-hole package, facilitating easy integration into printed circuit boards. Key applications include general purpose power supplies, audio amplifiers, and industrial control systems. The device operates reliably at junction temperatures up to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max20 W

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