KSE350S
TRANS PNP 300V 0.5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSE350S is a PNP Bipolar Junction Transistor (BJT) designed for high voltage applications. Featuring a 300V collector-emitter breakdown voltage and a maximum collector current of 500mA, this component is suitable for power switching and amplification circuits. Its 20W power dissipation capability, coupled with a 150°C junction temperature rating, ensures robust performance in demanding environments. The TO-126-3 (TO-225AA) through-hole package facilitates easy integration into existing PCB designs. The minimum DC current gain (hFE) is 30 at 50mA collector current and 10V collector-emitter voltage. This device finds utility in power supply regulation, audio amplifiers, and general-purpose switching applications within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 20 W |
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