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KSE340STU

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KSE340STU

TRANS NPN 300V 0.5A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSE340STU is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a maximum collector-emitter breakdown voltage of 300V and a continuous collector current rating of 500mA. Dissipation power is specified at 20W. The transistor is housed in a TO-126-3 (TO-225AA) package, suitable for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 50mA collector current and 10V collector-emitter voltage. The collector cutoff current (ICBO) is rated at a maximum of 100µA. This device is commonly employed in power supply circuits, audio amplification stages, and general industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max20 W

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