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KSE210STU

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KSE210STU

TRANS PNP 25V 5A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSE210STU is a PNP bipolar junction transistor (BJT) designed for robust performance across various applications. This component offers a continuous collector current (Ic) capability of up to 5A and a collector-emitter breakdown voltage (Vce) of 25V. It features a transition frequency (fT) of 65MHz, suitable for moderate frequency switching and amplification tasks. With a maximum power dissipation of 15W and an operating junction temperature of 150°C, the KSE210STU is engineered for reliability in demanding environments. Its DC current gain (hFE) is a minimum of 45 at 2A collector current and 1V collector-emitter voltage, with a Vce(sat) of 1.8V at 1A/5A. The transistor is housed in a TO-126-3 (TO-225AA) package, facilitating through-hole mounting. This device finds utility in power supply regulation, audio amplification, and general-purpose switching applications across industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.8V @ 1A, 5A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce45 @ 2A, 1V
Frequency - Transition65MHz
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)25 V
Power - Max15 W

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