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KSE200STSTU

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KSE200STSTU

TRANS NPN 25V 5A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSE200STSTU is an NPN bipolar junction transistor (BJT) designed for robust performance in power switching and amplification applications. This device features a maximum collector-emitter breakdown voltage of 25V and a continuous collector current capability of 5A. Its transition frequency is rated at 65MHz, suitable for moderate-frequency signal processing. The KSE200STSTU offers a minimum DC current gain (hFE) of 45 at 2A collector current and 1V Vce. Power dissipation is supported up to 15W, with a maximum junction temperature of 150°C. The transistor is housed in a TO-126-3 (TO-225AA) package for through-hole mounting, facilitating integration into various circuit designs. This component finds utility in industrial, automotive, and consumer electronics for power control and signal conditioning.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.8V @ 1A, 5A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce45 @ 2A, 1V
Frequency - Transition65MHz
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)25 V
Power - Max15 W

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