KSE182PWD
TRANS NPN 80V 3A DIPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSE182PWD is an NPN bipolar junction transistor designed for demanding applications. This device features a 80V collector-emitter breakdown voltage and a continuous collector current capability of 3A, with a maximum power dissipation of 1.5W. With a transition frequency of 500MHz and a minimum DC current gain (hFE) of 50 at 100mA and 1V, it offers robust performance for switching and amplification tasks. The KSE182PWD exhibits a Vce(sat) of 1.7V at 600mA and 3A, and a collector cutoff current (ICBO) of 100nA. Operating at junction temperatures up to 150°C, this component is suitable for use in industrial control, power management, and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | - |
| Mounting Type | - |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 600mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 1V |
| Frequency - Transition | 500MHz |
| Supplier Device Package | - |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.5 W |
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