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KSE181STU

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KSE181STU

TRANS NPN 60V 3A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSE181STU is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This through-hole component features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 3A. It offers a transition frequency of 50MHz and a power dissipation of 1.5W. The device exhibits a minimum DC current gain (hFE) of 50 at 100mA and 1V, with a saturation voltage (Vce(sat)) of 1.7V at 600mA and 3A. With a collector cutoff current (ICBO) of 100nA (max), it is suitable for use in industrial automation, consumer electronics, and power management systems. The KSE181STU is supplied in a TO-126-3 package.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic1.7V @ 600mA, 3A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 1V
Frequency - Transition50MHz
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1.5 W

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