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KSE180S

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KSE180S

TRANS NPN 40V 3A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSE180S is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of up to 3A. With a transition frequency of 50MHz and a maximum power dissipation of 1.5W, it is suitable for use in power supply circuits, audio amplifiers, and industrial control systems. The KSE180S is supplied in a TO-126-3 (TO-225AA) package, facilitating through-hole mounting. Key electrical parameters include a minimum DC current gain (hFE) of 50 at 100mA and 1V, and a collector cutoff current (ICBO) of 100nA. The saturation voltage (Vce(sat)) is specified at 1.7V maximum for an Ic of 3A and Ib of 600mA.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic1.7V @ 600mA, 3A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 1V
Frequency - Transition50MHz
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max1.5 W

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