KSE172STU
TRANS PNP 80V 3A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSE172STU is a PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component offers a maximum collector current (Ic) of 3 A and a collector-emitter breakdown voltage (Vce) of 80 V. With a transition frequency of 50 MHz and a maximum power dissipation of 1.5 W, it is suitable for power switching and amplification circuits. The DC current gain (hFE) is a minimum of 50 at 100 mA and 1 V. Presented in a TO-126-3 (TO-225AA) package for through-hole mounting, the KSE172STU exhibits a Vce saturation of 1.7 V at 600 mA and 3 A. The collector cutoff current (ICBO) is a maximum of 100 nA. This transistor is commonly utilized in industrial automation, power supplies, and general-purpose switching applications. The KSE172STU is supplied in tubes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 600mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.5 W |
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