KSE170STU
TRANS PNP 40V 3A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSE170STU is a PNP bipolar junction transistor (BJT) designed for high-performance switching and amplification applications. This component features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 3A. With a power dissipation rating of 1.5W and a transition frequency of 50MHz, it is suitable for use in power supply circuits, audio amplifiers, and general-purpose switching. The device exhibits a minimum DC current gain (hFE) of 50 at 100mA and 1V, and a Vce(sat) of 1.7V at 600mA and 3A. Packaged in a TO-126-3 (TO-225AA) through-hole configuration, the KSE170STU operates reliably up to a junction temperature of 150°C. Its robust design makes it a staple in industrial automation, consumer electronics, and telecommunications sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 600mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 1.5 W |
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