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KSE13003H1AS

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KSE13003H1AS

TRANS NPN 400V 1.5A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSE13003H1AS is a high-voltage NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 400V and a continuous collector current capability of 1.5A, with a maximum power dissipation of 20W. Its transition frequency is 4MHz, suitable for various switching and amplification tasks. The KSE13003H1AS is supplied in a TO-126-3 (TO-225AA) through-hole package, facilitating straightforward board mounting. It exhibits a minimum DC current gain (hFE) of 9 at 500mA and 2V. This transistor is utilized in power supply circuits, lighting control, and motor drive applications across industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 500mA, 1.5A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce9 @ 500mA, 2V
Frequency - Transition4MHz
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max20 W

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