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KSD985OSTU

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KSD985OSTU

TRANS NPN DARL 60V 1.5A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSD985OSTU is an NPN Darlington bipolar transistor featuring a 60V collector-emitter breakdown voltage and a maximum collector current of 1.5A. This through-hole component, housed in a TO-126-3 package, offers a minimum DC current gain of 4000 at 1A and 2V. With a power dissipation of 1W and an operating junction temperature of 150°C, it is suitable for applications in industrial control and power management systems. The device exhibits a Vce saturation of 1.5V at 1mA base current and 1A collector current.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce4000 @ 1A, 2V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1 W

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