KSD882YSTSSTU
TRANS NPN 30V 3A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSD882YSTSSTU is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a 30V collector-emitter breakdown voltage and a continuous collector current capability of up to 3A. With a maximum power dissipation of 1W and a transition frequency of 90MHz, it is suitable for use in power supply circuits, audio amplifiers, and switching regulators. The DC current gain (hFE) is a minimum of 160 at 1A and 2V, and the saturation voltage (Vce(sat)) is a maximum of 500mV at 200mA and 2A. The KSD882YSTSSTU is provided in a TO-126-3 through-hole package, facilitating straightforward board mounting. This device operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 1A, 2V |
| Frequency - Transition | 90MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1 W |
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