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KSD882RS

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KSD882RS

TRANS NPN 30V 3A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSD882RS NPN Bipolar Junction Transistor, housed in a TO-126-3 (TO-225AA) package. This device offers a 30V collector-emitter breakdown voltage and a maximum continuous collector current of 3A. With a power dissipation of 1W and a transition frequency of 90MHz, the KSD882RS is suitable for general-purpose amplification and switching applications. Key parameters include a minimum DC current gain (hFE) of 60 at 1A and 2V, and a saturation voltage (Vce(sat)) of 500mV at 200mA and 2A. The collector cutoff current (ICBO) is a maximum of 1µA. Operating temperature range is -55°C to 150°C. This component finds application in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 1A, 2V
Frequency - Transition90MHz
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max1 W

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