KSD880YTU
TRANS NPN 60V 3A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSD880YTU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a maximum collector current (Ic) of 3 A and a collector-emitter breakdown voltage (Vce) of 60 V. With a transition frequency of 3 MHz and a maximum power dissipation of 30 W, it is suitable for use in industrial control systems, power supplies, and audio amplifiers. The device offers a minimum DC current gain (hFE) of 100 at 500 mA and 5 V, and a saturation voltage (Vce(sat)) of 1 V at 300 mA and 3 A. Packaged in a TO-220-3 configuration, it operates at temperatures up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 7 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 5V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 30 W |
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