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KSD880Y

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KSD880Y

TRANS NPN 60V 3A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSD880Y is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 60V and a continuous collector current rating of 3A, making it suitable for power handling in various electronic systems. With a transition frequency of 3MHz and a maximum power dissipation of 30W, the KSD880Y is engineered for reliable performance. The device offers a minimum DC current gain (hFE) of 100 at 500mA and 5V, and a collector-emitter saturation voltage (Vce(sat)) of 1V at 300mA and 3A. Packaged in a standard TO-220-3 through-hole configuration, it is commonly employed in industrial, consumer electronics, and power supply circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 300mA, 3A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 5V
Frequency - Transition3MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max30 W

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