KSD880OPATU
TRANS NPN 60V 3A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSD880OPATU is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. Featuring a collector-emitter breakdown voltage of 60 V and a continuous collector current capability of 3 A, this device is suitable for power switching and amplification tasks. Its DC current gain (hFE) is a minimum of 60 at 500 mA and 5 V, ensuring effective signal control. The transition frequency is rated at 3 MHz, and it can dissipate up to 30 W. Packaged in a standard TO-220-3 through-hole configuration, the KSD880OPATU operates reliably up to 150°C (TJ). Typical applications include industrial control systems, audio amplification, and power supply regulation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 500mA, 5V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 30 W |
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