KSD880O
TRANS NPN 60V 3A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSD880O is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. Featuring a 60V collector-emitter breakdown voltage and a maximum collector current of 3A, this device is rated for 30W power dissipation. The KSD880O offers a minimum DC current gain (hFE) of 60 at 500mA and 5V, with a typical Vce saturation of 1V at 300mA and 3A. Its transition frequency is 3MHz, making it suitable for various switching and amplification tasks. The transistor is housed in a standard TO-220-3 package, facilitating through-hole mounting. The KSD880O finds utility in industrial power supplies, audio amplifiers, and general-purpose switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 500mA, 5V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 30 W |
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