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KSD794AYS

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KSD794AYS

TRANS NPN 60V 3A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi NPN Bipolar Junction Transistor (BJT), part number KSD794AYS. This device features a 60V collector-emitter breakdown voltage and a maximum collector current of 3A. With a transition frequency of 60MHz and a maximum power dissipation of 1W, it offers a minimum DC current gain (hFE) of 160 at 500mA and 5V. The saturation voltage is specified at 2V at 150mA collector current and 1.5A. Encased in a TO-126-3 (TO-225AA) package, this through-hole component is suitable for applications in consumer electronics and industrial control systems. The KSD794AYS exhibits a collector cutoff current (ICBO) of 1µA and operates within a temperature range of 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 150mA, 1.5A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 500mA, 5V
Frequency - Transition60MHz
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1 W

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