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KSD73YTU

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KSD73YTU

TRANS NPN 60V 5A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSD73YTU is a high-performance NPN bipolar junction transistor (BJT) designed for robust power switching applications. This device boasts a maximum collector current (Ic) of 5 A and a collector-emitter breakdown voltage (Vce) of 60 V. The KSD73YTU offers a transition frequency (fT) of 20 MHz and a maximum power dissipation of 30 W, making it suitable for demanding industrial and consumer electronics. Key parameters include a minimum DC current gain (hFE) of 120 at 1 A and 10 V, and a saturation voltage (Vce(sat)) of 2 V at 500 mA and 5 A. The transistor is housed in a standard TO-220-3 package for through-hole mounting, ensuring reliable thermal management and ease of assembly. This component is frequently utilized in power supply regulation, audio amplification, and general-purpose switching circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 500mA, 5A
Current - Collector Cutoff (Max)5mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1A, 10V
Frequency - Transition20MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max30 W

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