KSD569RTU
TRANS NPN 80V 7A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSD569RTU is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, packaged in a TO-220-3 configuration, offers a robust 80V collector-emitter breakdown voltage and a substantial 7A continuous collector current capability. With a maximum power dissipation of 1.5W and an operating junction temperature of 150°C, it is suitable for power switching and amplification tasks. Key electrical specifications include a minimum DC current gain (hFE) of 40 at 3A and 1V, and a Vce saturation of 500mV at 500mA and 5A. The device exhibits a low collector cutoff current of 10µA (ICBO). This transistor finds utility in industrial power supplies, audio amplifiers, and general-purpose power switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 3A, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.5 W |
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