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KSD568RTU

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KSD568RTU

TRANS NPN 60V 7A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi KSD568RTU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a 60V collector-emitter breakdown voltage and a continuous collector current capability of 7A. The KSD568RTU is packaged in a standard TO-220-3 through-hole configuration, facilitating ease of mounting and thermal management. Key electrical parameters include a minimum DC current gain (hFE) of 40 at 3A and 1V, and a saturation voltage (Vce(sat)) of 500mV at 500mA and 5A. It also specifies a maximum collector cutoff current (ICBO) of 10µA and can operate at junction temperatures up to 150°C. Its robust current handling and voltage ratings make it suitable for use in power supply circuits, audio amplifiers, and motor control systems within industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 500mA, 5A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 3A, 1V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)7 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1.5 W

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