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KSD568OTU

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KSD568OTU

TRANS NPN 60V 7A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSD568OTU is an NPN bipolar junction transistor (BJT) designed for power switching and amplification applications. This component features a 60V collector-emitter breakdown voltage and a continuous collector current capability of up to 7A. With a maximum power dissipation of 1.5W and a low saturation voltage of 500mV at 5A collector current, it is suitable for demanding power supply circuits, audio amplifiers, and general-purpose switching. The KSD568OTU is housed in a TO-220-3 package, facilitating through-hole mounting and efficient thermal management. Its DC current gain (hFE) is specified at a minimum of 60 at 3A and 1V. This transistor operates within a junction temperature range of 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 500mA, 5A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 3A, 1V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)7 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1.5 W

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