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KSD560Y

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KSD560Y

TRANS NPN DARL 100V 5A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSD560Y is a NPN Darlington bipolar junction transistor designed for applications requiring high current gain and switching capability. This device features a 100V collector-emitter breakdown voltage and a continuous collector current of 5A, with a saturation voltage of 1.5V at 3A collector current. The minimum DC current gain (hFE) is rated at 5000 at 3A collector current and 2V collector-emitter voltage. Packaged in a TO-220-3 through-hole configuration, it offers a maximum power dissipation of 1.5W and an operating junction temperature of 150°C. The KSD560Y is commonly utilized in power switching, amplification, and general-purpose electronics across various industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 3mA, 3A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce5000 @ 3A, 2V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1.5 W

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