KSD560R
TRANS NPN DARL 100V 5A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSD560R is an NPN Darlington bipolar junction transistor designed for high-current switching and amplification applications. Featuring a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 5A, this device is well-suited for power control circuits. Its high DC current gain, specified at a minimum of 2000 at 3A and 2V, ensures efficient operation with minimal base drive. The transistor exhibits a Vce(sat) of 1.5V at 3mA base current and 3A collector current, indicating low power dissipation during saturation. With a maximum power dissipation of 1.5W and an operating junction temperature of 150°C, it is robust for demanding environments. The KSD560R is presented in a TO-220-3 package, facilitating through-hole mounting. This component finds application in power supplies, motor control, and general-purpose amplification across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 3mA, 3A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 3A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.5 W |
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