Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

KSD560OTU

Banner
productimage

KSD560OTU

TRANS NPN DARL 100V 5A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi KSD560OTU is an NPN Darlington bipolar junction transistor designed for high-current switching and amplification applications. This component features a 100V collector-emitter breakdown voltage and a maximum collector current of 5A. With a minimum DC current gain (hFE) of 3000 at 3A and 2V, it offers significant amplification capabilities. The transistor has a saturation voltage (Vce(sat)) of 1.5V at 3mA base current and 3A collector current. It is packaged in a TO-220-3 through-hole configuration, allowing for efficient heat dissipation with a maximum power rating of 1.5W and an operating temperature of up to 150°C. The KSD560OTU finds application in power supply circuits, motor control, and general-purpose amplification within industrial and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 3mA, 3A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce3000 @ 3A, 2V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1.5 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MCH6203-TL-E

TRANS NPN 50V 1A 6MCPH

product image
BC560CTA

TRANS PNP 45V 0.1A TO92-3

product image
MJE371G

TRANS PNP 40V 4A TO126