KSD526O
TRANS NPN 80V 4A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSD526O is an NPN bipolar junction transistor (BJT) designed for robust power switching applications. This device features a 80V collector-emitter breakdown voltage and a maximum collector current of 4A, making it suitable for power supply circuits, audio amplifiers, and general-purpose switching. The KSD526O offers a transition frequency of 8MHz and a maximum power dissipation of 30W. It is supplied in a TO-220-3 through-hole package, facilitating ease of assembly in printed circuit board designs. Key electrical characteristics include a minimum DC current gain (hFE) of 70 at 500mA and 5V, and a saturation voltage (Vce Sat) of 1.5V at 300mA and 3A. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 30µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 5V |
| Frequency - Transition | 8MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 30 W |
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