KSD471ACGBU
TRANS NPN 30V 1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSD471ACGBU is an NPN Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 1A. Its transition frequency is rated at 130MHz, with a maximum power dissipation of 800mW. The KSD471ACGBU offers a minimum DC current gain (hFE) of 200 at 100mA and 1V. It is packaged in a TO-92-3 (TO-226-3) through-hole package, suitable for various industrial and consumer electronics manufacturing processes. The device operates at temperatures up to 150°C (TJ) and exhibits a Vce(sat) of 500mV at 100mA and 1A. This transistor is commonly found in power supply circuits, audio amplifiers, and general switching applications.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 1V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 800 mW |
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