KSD401FYTU
TRANS NPN 150V 2A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSD401FYTU is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component offers a 150V collector-emitter breakdown voltage and a maximum collector current of 2A, making it suitable for power switching and amplification tasks. With a power dissipation of 25W and a transition frequency of 5MHz, it facilitates efficient operation across a range of frequencies. The minimum DC current gain (hFE) is specified at 120 at 400mA collector current and 10V Vce. The saturation voltage (Vce) is a maximum of 1V at 50mA base current and 500mA collector current. This through-hole device is packaged in a TO-220-3 configuration, ideal for applications in industrial power supplies, audio amplification, and general-purpose switching circuits. It operates at junction temperatures up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 400mA, 10V |
| Frequency - Transition | 5MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 25 W |
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