KSD363YTU
TRANS NPN 120V 6A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSD363YTU is a robust NPN bipolar junction transistor engineered for demanding applications. This device offers a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 6A, with a maximum power dissipation of 40W. Its transition frequency is rated at 10MHz, making it suitable for various switching and amplification tasks. Featuring a minimum DC current gain (hFE) of 120 at 1A and 5V, the KSD363YTU ensures efficient current control. The saturation voltage (Vce) is a maximum of 1V at 100mA collector current and 1A base current. Packaged in a standard TO-220-3 through-hole configuration, this component is commonly deployed in industrial power supplies, motor control circuits, and general-purpose switching applications. It operates reliably at junction temperatures up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1mA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A, 5V |
| Frequency - Transition | 10MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 40 W |
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