KSD363Y
TRANS NPN 120V 6A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSD363Y is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a maximum collector-emitter breakdown voltage (Vce) of 120V and a continuous collector current (Ic) capability of 6A, with a maximum power dissipation of 40W. The KSD363Y offers a transition frequency of 10MHz and a minimum DC current gain (hFE) of 120 at 1A collector current and 5V Vce. Its saturation voltage (Vce Sat) is rated at 1V maximum for an Ic of 1A and an Ib of 100mA. Packaged in a TO-220-3 through-hole configuration, this transistor is suitable for mounting on printed circuit boards. The KSD363Y is commonly utilized in power switching, linear voltage regulation, and general-purpose amplification across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1mA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A, 5V |
| Frequency - Transition | 10MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 40 W |
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