KSD363OTU
TRANS NPN 120V 6A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSD363OTU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage (Vce) of 120 V and a continuous collector current (Ic) capability of 6 A, with a maximum power dissipation of 40 W. The KSD363OTU offers a minimum DC current gain (hFE) of 70 at 1 A and 5 V, and a transition frequency of 10 MHz. It is packaged in a TO-220-3 through-hole configuration, suitable for mounting on printed circuit boards. Typical applications include power supply circuits and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1mA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 1A, 5V |
| Frequency - Transition | 10MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 40 W |
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