KSD363O
TRANS NPN 120V 6A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSD363O is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a standard TO-220-3 package, offers a maximum collector-emitter breakdown voltage of 120V and can handle a continuous collector current of up to 6A. With a maximum power dissipation of 40W and a transition frequency of 10MHz, the KSD363O is suitable for power switching and amplification circuits. Its minimum DC current gain (hFE) is rated at 70 at 1A and 5V. The collector cutoff current is a maximum of 1mA (ICBO). This transistor finds utility in industrial automation, power supply units, and general-purpose switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1mA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 1A, 5V |
| Frequency - Transition | 10MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 40 W |
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