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KSD362N

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KSD362N

TRANS NPN 70V 5A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSD362N is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This through-hole device features a 70V collector-emitter breakdown voltage and a maximum continuous collector current of 5A. With a power dissipation of 40W and a transition frequency of 10MHz, the KSD362N offers robust performance. The minimum DC current gain (hFE) is specified at 20 at 5A and 5V. Collector cutoff current (ICBO) is a maximum of 20µA. The saturation voltage (Vce(sat)) is a maximum of 1V at 500mA collector current and 5A collector current. The TO-220-3 package is suitable for thermal management in various industrial and consumer electronics applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 500mA, 5A
Current - Collector Cutoff (Max)20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 5A, 5V
Frequency - Transition10MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)70 V
Power - Max40 W

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