KSD288YTU
TRANS NPN 55V 3A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSD288YTU is an NPN bipolar junction transistor (BJT) designed for robust performance in power switching and amplification applications. This component features a 55V collector-emitter breakdown voltage and a continuous collector current capability of 3A, with a maximum power dissipation of 25W. The device offers a minimum DC current gain (hFE) of 120 at 500mA collector current and 5V collector-emitter voltage. Its TO-220-3 package facilitates through-hole mounting, suitable for demanding thermal management in industrial control, power supplies, and automotive systems. The KSD288YTU exhibits a typical Vce(sat) of 1V at 100mA base current and 1A collector current, ensuring efficient operation.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 50µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 55 V |
| Power - Max | 25 W |
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