KSD288WTU
TRANS NPN 55V 3A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSD288WTU is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a collector-emitter breakdown voltage (Vce(max)) of 55V and can handle a continuous collector current (Ic(max)) of 3A, with a maximum power dissipation (Pd(max)) of 25W. Its saturation voltage (Vce(sat)) is rated at 1V at 100mA collector current and 1A base current, ensuring efficient switching. The device exhibits a minimum DC current gain (hFE) of 40 at 500mA collector current and 5V collector-emitter voltage. With a maximum junction temperature of 150°C and packaged in a TO-220-3 through-hole configuration, the KSD288WTU is suitable for use in power supply circuits, motor control, and general-purpose amplification within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 50µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 55 V |
| Power - Max | 25 W |
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