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KSD288OTU

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KSD288OTU

TRANS NPN 55V 3A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSD288OTU is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This through-hole component, housed in a TO-220-3 package, offers a 55V collector-emitter breakdown voltage and a maximum collector current of 3A. With a power dissipation capability of 25W and an operating junction temperature of 150°C, it is well-suited for power switching and amplification circuits. Key specifications include a minimum DC current gain (hFE) of 70 at 500mA and 5V, and a saturation voltage (Vce Sat) of 1V at 100mA and 1A. The device exhibits a low collector cutoff current (ICBO) of 50µA. This transistor finds application in industrial control systems, power supplies, and general-purpose amplification across various industries.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Current - Collector Cutoff (Max)50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 500mA, 5V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)55 V
Power - Max25 W

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