KSD261CGTA
TRANS NPN 20V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSD261CGTA NPN Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, housed in a TO-92-3 package, offers a collector current capability of up to 500 mA and a collector-emitter breakdown voltage of 20 V. Key specifications include a maximum power dissipation of 500 mW and an operating junction temperature of 150°C. The device exhibits a minimum DC current gain (hFE) of 200 at 100 mA collector current and 1 V collector-emitter voltage. Saturation voltage (Vce Sat) is specified at a maximum of 400 mV with 50 mA base current driving 500 mA collector current. The KSD261CGTA is supplied in Cut Tape (CT) packaging and is commonly utilized in consumer electronics, industrial control systems, and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 500 mW |
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