KSD227GBU
TRANS NPN 25V 0.3A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi KSD227GBU, a Bipolar Junction Transistor (BJT) with an NPN configuration, offers a 25V collector-emitter breakdown voltage and a maximum collector current of 300mA. This component features a minimum DC current gain (hFE) of 200 at 50mA collector current and 1V collector-emitter voltage. The saturation voltage (Vce) is specified at a maximum of 400mV at 30mA base current and 300mA collector current. With a maximum power dissipation of 400mW, the KSD227GBU is housed in a TO-92-3 (TO-226AA) package and is supplied in bulk packaging. Its operating junction temperature can reach 150°C. This transistor finds applications in various electronic circuits, including general-purpose amplification and switching within consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 50mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 400 mW |
Request a Quote
Clients Also Buy
BC547BTAR
TRANS NPN 45V 0.1A TO92-3
MJE200STU
TRANS NPN 25V 5A TO126-3
PN2369A_D27Z
TRANS NPN 15V 0.2A TO92-3
