KSD2012YYDTU
TRANS NPN 60V 3A TO220F-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSD2012YYDTU is an NPN bipolar junction transistor designed for robust performance in demanding applications. This component features a maximum collector current (Ic) of 3 A and a collector-emitter breakdown voltage (Vce(max)) of 60 V. With a transition frequency (fT) of 3 MHz and a maximum power dissipation of 25 W, it is suitable for power switching and amplification tasks. The DC current gain (hFE) is a minimum of 100 at 500 mA and 5 V. The transistor exhibits a Vce(sat) of 1 V at 200 mA and 2 A. Packaged in a TO-220F-3 (Y-Forming) through-hole configuration, this device operates at temperatures up to 150°C (TJ). It finds application in industrial automation, power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 5V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-220F-3 (Y-Forming) |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 25 W |
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