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KSD1943TU

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KSD1943TU

TRANS NPN 60V 3A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSD1943TU is an NPN bipolar junction transistor (BJT) designed for robust power applications. This device offers a collector-emitter breakdown voltage of 60V and a continuous collector current rating of 3A, with a maximum power dissipation of 40W. Featuring a high DC current gain (hFE) of 400 at 500mA and 4V, it ensures efficient amplification. The saturation voltage (Vce(sat)) is specified at 1V maximum for an operating point of 50mA base current and 2A collector current. The KSD1943TU is housed in a standard TO-220-3 package, facilitating through-hole mounting. It is suitable for use in industrial automation, consumer electronics, and power supply circuits. The device operates across a temperature range of -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 2A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce400 @ 500mA, 4V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max40 W

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