KSD1691YSTSTU
TRANS NPN 60V 5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSD1691YSTSTU is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 5A, with a power dissipation of 1.3W. The transistor exhibits a minimum DC current gain (hFE) of 160 at 2A and 1V. Saturation voltage (Vce) is specified at a maximum of 300mV for an Ic of 2A driven by 200mA of base current. The KSD1691YSTSTU is housed in a TO-126-3 (TO-225AA) package, suitable for through-hole mounting. Typical applications include power switching, linear regulation, and general-purpose amplification across industrial and consumer electronics sectors. The device operates at junction temperatures up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 2A, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.3 W |
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