KSD1691OSTU
TRANS NPN 60V 5A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSD1691OSTU is an NPN bipolar junction transistor (BJT) designed for robust power switching applications. This TO-126-3 packaged device offers a maximum collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 5A. With a power dissipation capability of 1.3W and an operating junction temperature of 150°C, it is suitable for demanding environments. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 2A and 1V, and a saturation voltage of 300mV at 200mA collector current and 2A collector current. The collector cutoff current is rated at a maximum of 10µA. This component finds application in power supplies, motor control, and general-purpose amplification circuits within industrial automation, consumer electronics, and telecommunications sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.3 W |
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