KSD1616GBU
TRANS NPN 50V 1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSD1616GBU is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 1A. It offers a transition frequency of 160MHz and a maximum power dissipation of 750mW. The device exhibits a minimum DC current gain (hFE) of 200 at 100mA collector current and 2V collector-emitter voltage, with a Vce(sat) of 300mV at 50mA base current and 1A collector current. The KSD1616GBU is housed in a TO-92-3 through-hole package, suitable for applications in consumer electronics and industrial control systems. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 160MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 750 mW |
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