KSD1616AYTA
TRANS NPN 60V 1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSD1616AYTA is a general-purpose NPN bipolar junction transistor. This component features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 1A. With a transition frequency of 160MHz and a maximum power dissipation of 750mW, it is suitable for various switching and amplification applications. The minimum DC current gain (hFE) is rated at 135 at 100mA and 2V. The saturation voltage (Vce(sat)) is a maximum of 300mV at 50mA drive current and 1A collector current. This device is supplied in a TO-92-3 package, designed for through-hole mounting, and is available in cut tape packaging. It finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 135 @ 100mA, 2V |
| Frequency - Transition | 160MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 750 mW |