KSD1616ALBU
TRANS NPN 60V 1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSD1616ALBU is an NPN Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, housed in a TO-92-3 package, offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of up to 1A. It features a transition frequency of 160MHz and a maximum power dissipation of 750mW. The DC current gain (hFE) is specified at a minimum of 300 at 100mA and 2V. The saturation voltage (Vce(sat)) is a maximum of 300mV at 1A collector current and 50mA base current. The collector cutoff current (ICBO) is a maximum of 100nA. This device is suitable for use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 2V |
| Frequency - Transition | 160MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 750 mW |
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