KSD1408YTU
TRANS NPN 80V 4A TO220F-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSD1408YTU is a bipolar junction transistor (BJT) featuring an NPN configuration. This device offers a maximum collector-emitter voltage (Vce) of 80V and a continuous collector current (Ic) capability of up to 4A. With a power dissipation of 25W and a transition frequency of 8MHz, it is suitable for applications requiring moderate switching speeds and power handling. The minimum DC current gain (hFE) is specified at 120 at 500mA collector current and 5V Vce. Saturation voltage (Vce(sat)) is a maximum of 1.5V at 300mA Ic and 3A Ib. The KSD1408YTU is housed in a TO-220F-3 package, designed for through-hole mounting, and operates at temperatures up to 150°C. This component finds use in various industrial and consumer electronics applications, including power supply circuits and general-purpose amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 30µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 5V |
| Frequency - Transition | 8MHz |
| Supplier Device Package | TO-220F-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 25 W |
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