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KSD1406YTU

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KSD1406YTU

TRANS NPN 60V 3A TO220F-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSD1406YTU is a bipolar junction transistor (BJT) featuring an NPN configuration. This component offers a 60V collector-emitter breakdown voltage and a maximum collector current of 3A. With a minimum DC current gain (hFE) of 100 at 500mA and 5V, it provides efficient amplification. The transition frequency is rated at 3MHz, and it can dissipate up to 25W of power. The KSD1406YTU is supplied in a TO-220F-3 package, designed for through-hole mounting. It exhibits a Vce saturation of 1V at 300mA and 3A, with a collector cutoff current of 100µA (ICBO). This device is suitable for applications in power supply circuits and general-purpose amplification within industrial and automotive sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 300mA, 3A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 5V
Frequency - Transition3MHz
Supplier Device PackageTO-220F-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max25 W

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